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Low-temperature Co-Fired Ceramic (LTCC) Fab at ÉTS 

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Overview  LTCC technology is a general-purpose multi-layer ceramic process used in various areas, namely:   Medical sensors and electronics  Automotive electronics   Satellite electronics and other vehicles in harsh environments  RF/microwave/mm-wave communications  CMC provides access to LTCC prototyping and other related services through the LTCC@ÉTS laboratory. Technical support on the LTCC process and access to the design […]

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GlobalFoundries® 55 nm BCDLite

Technologies / By

CMC Microsystems offers access to the GlobalFoundries® 55 nm BCDLite (GF55BCDLite) technology, designed for applications requiring Bipolar-CMOS-DMOS (BCD) technology, such as high-performance Power Management ICs (PMICs). This process provides optimized RDS(on) for efficient power delivery and features low-power and high-voltage LDMOS transistors, making it ideal for power-sensitive designs. CMC Microsystems offers access to this technology

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GlobalFoundries® 28 SLPe

Technologies / By

CMC Microsystems offers access to the GlobalFoundries® 28 nm Super Low Power Extended (28SLPe) technology, an ideal process for energy-efficient, mixed-signal, and RF SoC applications. The 28SLPe technology provides best-in-class power efficiency for a wide range of applications. Its optimized 28 nm planar transistor technology enables ultra-low leakage and supports high-density designs for performance and

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GlobalFoundries® Silicon Photonics - GF Fotonix™ (45SPCLO)

Technologies / By

The GlobalFoundries® (GF) silicon photonics (SiPh) foundry portfolio is designed to help you deliver more data faster, farther, and more efficiently than traditional CMOS technologies. 45SPCLO, built on a 45 nm SOI platform, enables monolithic integration of RF, analog and Si-Photonic circuits with high efficiency and high data speed. CMC Microsystems offers access to GlobalFoundries technologies

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VTT Niobium SWAPS Junction Process

Technologies / By

This two-layer process allows for the fabrication of Niobium side-wall passivated junctions via an Nb-Al-AlOx-Nb tri-layer, alongside an Nb wiring layer on top.  CMC offers this process as part of a multi-project wafer (MPW) service. Nb-Al-ALOx-Nb trilayer junctions  High-resistivity silicon substrate Nb wiring layer on top The process provides 20 copies of the designs. Applications

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Applied Nanotools (ANT) Silicon Nitride (SiN) Fabrication Process

Technologies / By

Silicon nitride with device layer thickness 400 nm and buffer oxide Layer thickness 4.5 µm 100 keV electron-beam lithography system enabling features down to 120 nm Fully etched devices (etched down to the buffer oxide) are created using an e-beam mask material and anisotropic ICP-RIE etching process. Tri-layer TiW/Al metallization and TiW alloy heater are available

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Applied Nanotools (ANT) NanoSOI Fabrication Process

Technologies / By

Silicon-on-insulator, 220-nm top Si film, 2000-nm buried oxide (BOX) 100 keV electron-beam lithography system enabling features down to 60 nm One full etch of the top silicon for standard MPW run, partial silicon etching will be available in near future Tri-layer TiW/Al metallization and TiW alloy heater are available Metal oxide window, deep trench for

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GlobalFoundries® 12 LP

Technologies / By

CMC offers access to the GlobalFoundries® 12 nm FinFET technologies. The 12LP technology is targeted for high-performance, power-efficient SoC applications in demanding, high-volume applications. 3D FinFET transistor technology provides best-in-class performance and power with significant cost advantages from 12nm area scaling. FinFET benefits include high drive current, superior mismatch and Vmin and >10x SER (soft

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Ferdinand-Braun-Institut

Compound Semiconductor Epitaxy

Technologies / By

CMC supports prototyping services to grow a variety of structures on InP, GaAs and Ge substrates through industrial standard foundries, for research and applications in optoelectronics and photonics. Subsidized rates are available for CMC subscribers. Methods of Epitaxy Molecular Beam Epitaxy (MBE) on GaAs and Ge substrates Gas-Source MBE on InP substrate Metal-Organic Chemical Vapor

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Generic Aluminum Nitride Carriers for Optoelectronic Applications

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Overview These carriers are designed primarily for DC characterization. However, the layouts include 50-ohm co-planar GSG bias lines with 500-micron pitch. The laser carrier includes provision for inclusion of wire bonds to power up to six independent sections and accommodates a device with up to a 3 mm cavity length. The waveguide device is shorter,

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GlobalFoundries® 22FDX FDSOI 22 nm

Technologies / By

CMC Microsystems offers access to the GlobalFoundries® (GF) 22FDX™ 22 nm Fully-Depleted Silicon-on-Insulator (FD-SOI) process technology platform for low power embedded applications. The 22 nm FD-SOI transistor technology delivers FinFET-like performance with energy-efficiency. The simultaneous high Ft /high Fmax, high self-gain and high current efficiency of 22FDX enables ultra low power analog/RF/mmWave designs. For more information,

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GlobalFoundries® SiGe 8XP BiCMOS 130 nm

Technologies / By

CMC Microsystems offers access to the GlobalFoundries® (GF) 130 nm high-performance SiGe BiCMOS technology. This technology is well suited for the design of high-speed, low-noise mixed-signal systems. The silicon-proven solutions enable you to maximize performance, integrate extensive digital and RF functionality and exploit an economical silicon platform. An advanced copper metallization feature enables higher current

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GlobalFoundries® 45 nm RFSOI

Technologies / By

CMC offers access to the GlobalFoundries® (GF) 45 nm RF Silicon on Insulator (SOI) CMOS technology. The GF 45RFSOI technology is targeted for high performance, next-generation mobile communication infrastructure. This technology offers collective benefits of RF-centric features, device stacking, an optimized BEOL and a high-resistivity substrate. The RF centric process enhancements of 45RFSOI build on

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GlobalFoundries® 90 nm BiCMOS SiGe 9HP

Technologies / By

CMC Microsystems offers access to the GlobalFoundries® (GF) 90 nm High-performance SiGe BiCMOS technology. The GF 90 nm high-performance BiCMOS technology is well suited for the design of high-speed logic/mixed-signal systems. The process is configured for 1.2 V/1.8 V/2.5 V/3.3 V high-performance operation at RF frequencies. The technology offers low noise figure, high gain and

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GlobalFoundries® Silicon Photonics 9WG

Technologies / By

The GlobalFoundries® (GF) silicon photonics (SiPh) foundry portfolio is designed to help you deliver more data faster, farther and more efficiently than traditional CMOS technologies. 9WG is an industry-first SiPh foundry solution. Built on a 90 nm SOI platform, the offering enables you to leverage high-volume manufacturing along with advanced processing and controls that utilize

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Effectiveness Criteria

FAB / By

Realized or potential economic and social benefits to Canada. Measures include: contributions and prospective benefits to the National Design Network knowledge transferred between university researchers and industry (both directions) successful commercialization of research realized and prospective benefits to quality of life, health and the environment Demonstrated industrial relevance of research. Measures include: scope and nature

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Close up of laser cleaving

Laser-Assisted Cleaving

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Overview The estimated turnaround time for this service is four to six weeks. Processing takes place at INO. Laser is used to trigger the location of cleaving. The cleaving is done with an accuracy of +/-15 µm. The technique provides good facet quality for end-fire coupling. Thin Silicon layers are accepted (up to 5 µm). For chip dimensions, see Guidelines

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Flip-Chip Assembly Services

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For MEMS and microelectronic device applications requiring a small footprint and short interconnects, our flip-chip assembly service offers access to die bumping or die-to-die/die-on-board flip-chip bonding. Whether your chip was fabricated through CMC services, a university-based fabrication facility, or elsewhere, we can help by providing competitive pricing, access to quick-start documentation, and engineering support.

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Financial Assistance Payments

MNT / By

The MNT Award supports custom microfabrication projects at open-access facilities MNT Award: 80% of the fabrication costs. Travel supplement (for travel >100 km to the facility): costs for travel, accommodation and meals up to $1,500. The Student’s academic supervisor must hold a CMC Subscription. The Microfabrication Award component will be paid by a cheque made out

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Teledyne Micralyne logo

Teledyne Micralyne Micralyne MicraGEM-Si™ MEMS Process

Technologies / By

Micralyne MicraGEM-SiTM is a silicon-on-insulator (SOI) based MEMS process which will reduce the initial cost and risk of prototype development, while speeding the time to market for MEMS- Based devices. MicraGEM-SiTM is ideally suited for the manufacture of tilting mirrors and mirror arrays for variable optical attenuators (VOA) and wavelength selective switch (WSS) modules, commonly used in

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AMF Silicon Photonics General-Purpose Fabrication Process

Technologies / By

Silicon-on-insulator, 220-nm top Si film, 3000-nm buried oxide (BOX) High resistivity handle wafer (>750 ohm-cm) 193-nm deep UV lithography for waveguides, enabling features down to approximately 140 nm Two partial etches and one full etch of the top silicon PECVD Silicon Nitride waveguide integration 6 implants for optical modulators (P++, P+, P, N++, N+, N) Germanium

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AMS 0.35 µm CMOS Process Technology (High-Voltage)

Technologies / By

This 0.35 µm CMOS technology offers four metal layers, digital standard cells, an anti-reflective coating and high-efficiency photodiodes, and bulk micromachining. CMC’s multi-project wafer service delivers this technology from austriamicrosystems, offering three processes: Basic, Opto and High-Voltage (see details below). The technology is suitable for: High-Voltage Process (H35B4D3) Details Technology Features: 4 metal and 2 poly layers with a

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AMS 0.35 µm CMOS Process Technology (Opto)

Technologies / By

This 0.35 μm CMOS technology offers four metal layers, digital standard cells, an anti-reflective coating and high-efficiency photodiodes, and bulk micromachining. CMC’s multi-project wafer service delivers this technology from austriamicrosystems, offering three processes: Basic, Opto (see details below) and High-Voltage. Opto Process (C35B4O1) Details Technology Features: 4 metal and 2 poly layers (similar to basic option) High-efficiency

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AMS 0.35 µm CMOS Process Technology (Basic)

Technologies / By

This 0.35 μm CMOS technology offers four metal layers, digital standard cells, an anti-reflective coating and high-efficiency photodiodes, and bulk micromachining. CMC’s multi-project wafer service delivers this technology from austriamicrosystems, offering three processes: Basic (see details below), Opto and High-Voltage. Basic Process (C35B4C3) Details Technology Features: 4 metal and 2 poly layers Supply Voltage: 3.3/5V Bulk-micromachining option, allowing

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tsmc logo

TSMC 0.35 µm CMOS Process Technology

Technologies / By

This 0.35 μm CMOS technology is available through CMC’s multi-project wafer service, which delivers Taiwan Semiconductor Manufacturing Company (TSMC) nanometer and micron-scale CMOS technologies. Applications The 0.35 µm CMOS (CMC term is CMOSP35) process is suitable for: Analog circuits RF circuits Mixed-signal circuits Process Details Electrical Contact Forming Technology: Polycide Layers: 4 metal, 2 poly Supply Voltages:

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STMicroelectronics - Life Augmented

STM 28nm FD SOI CMOS

Technologies / By

The latest product information can be found at: http://mycmp.fr/datasheet/ic-28nm-cmos28fdsoi. To start the 28-nm licensing process, please submit your design kit request to CMP directly through the link: https://mycmp.fr/requests/design-kit-141.html. Notes: STMicroelectronics prohibits use of this 28-nm technology for any medical or military applications. The expected number of chips to be delivered for this technology is 30.

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MNT Research Projects

MNT / By

A selection of research projects that benefited from equipment and processes at MNT facilities across Canada are presented below. If you would like to share your MNT research project on this page, complete the project template and e-mail Andrew Fung, Client Technology Advisor – Micro/Nanotechnology Business Development. Microfluidic device for studying T lymphocyte migration in DC electric fields, Jing

MNT Research Projects Read More »

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